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Samsung Electronicsannounced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class four gigabit (Gb) DDR3 DRAM chips.
Samsung’s 30nm-class 4Gb DDR3 chip offers an approximate 50 percent increase in productivity over a 40nm-class 4Gb DDR3, and as a result is expected to achieve rapid market penetration.
With its new 32GB registered dual inline memory module (RDIMM) and an 8GB small outline dual in-line memory module (SO-DIMM) added this month, Samsung has completed a full product line-up of 30nm-class 4Gb green DDR3-based solutions.
Samsung’s new 1.35-volt 32GB RDIMM performs at up to 1,866 megabits per second (Mbps), achieving a 40 percent improvement over a 1,333 Mbps, 40nm-class 32GB RDIMM operating at 1.5 volts, therein consuming 18 percent less power.
The 40nm-class 32GB RDIMM was bestowed an Eco-Design Award at the International Consumer Electronics Show (CES) 2011 Innovation Awards. Also, the new 8GB SO-DIMM version processes data at up to 2,133 Mbps when operating at 1.5 volts.
Samsung expects to have more than 10 percent of its total DRAM chip production in 2012 at the 4Gb (or higher) density.
Samsung’s 30nm-class 4Gb DDR3 chip offers an approximate 50 percent increase in productivity over a 40nm-class 4Gb DDR3, and as a result is expected to achieve rapid market penetration.
With its new 32GB registered dual inline memory module (RDIMM) and an 8GB small outline dual in-line memory module (SO-DIMM) added this month, Samsung has completed a full product line-up of 30nm-class 4Gb green DDR3-based solutions.
Samsung’s new 1.35-volt 32GB RDIMM performs at up to 1,866 megabits per second (Mbps), achieving a 40 percent improvement over a 1,333 Mbps, 40nm-class 32GB RDIMM operating at 1.5 volts, therein consuming 18 percent less power.
The 40nm-class 32GB RDIMM was bestowed an Eco-Design Award at the International Consumer Electronics Show (CES) 2011 Innovation Awards. Also, the new 8GB SO-DIMM version processes data at up to 2,133 Mbps when operating at 1.5 volts.
Samsung expects to have more than 10 percent of its total DRAM chip production in 2012 at the 4Gb (or higher) density.
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