Samsung First DDR4 Memory Module
Samsung has introduced its first DDR4 DRAM memory modules completed development of the industry’s first DDR4 DRAM module last month, using 30 nanometer (nm) class* process technology. The new chips are claimed to offer significant improvements to power efficiency and overall performance, and promise much higher transfer rates at much lower power consumption.
President, memory division, Samsung Electronics Dong Soo Jun,” said, “The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application.” “Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year”
The new modules can reportedly transfer data at the rate of upto 2.133Gbps at a voltage setting of 1.2V. The transfer rate apparently goes all the way up to 3.2Gbps on higher voltages. Compare this to the existing DDR3 and DDR2 modules which can transfer upto 1.6Gbps and 800Mbps at 1.3V or 1.5V settings. Samsung claims these modules will lead to a power consumption reduction of about 40% when compared to the 1.5V DDR3 modules. The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.
Samsung has been leading the advancement of DRAM technology ever since it developed the industry’s first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 DRAM using 80nm-class technology.
Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.