Samsung Developed 4GB LPDDR2 DRAM chips using 30nm Technolog



Samsung Developed 4GB LPDDR2 DRAM chips using 30nm Technology

Samsung Electronics has announced that they have developed and started sampling the industry’s first monolithic 4 gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30 nm class technology in November.
The newly developed LPDDR2 DRAM is available in 4 Gigabit capable of transferring up to 1,066Mbps, which approaches the performance of memory solutions for PC applications making it more than doubles the performance of the industry’s previous mobile DRAM, which operates between 333Mbps and 400Mbps.
“The mobile device market is gaining momentum with the advent of tablet PCs, which is adding significantly to the already surging smart-phone segment,” said Jun-Young Jeon, vice president, memory product planning team, Samsung Electronics. “Samsung will work closely with mobile device designers to bring high-performance, high-density mobile solutions to market as rapidly as possible,” the vice president added.
The DRAM will let devices get lighter and thinner while also boosting battery life with the advantage of a 20% reduction in package height (0.8mm instead of 1 mm) and, compared to 8 Gb packages composed of four 2 Gb chips, and will utilize 25% less power.
Samsung is also planning to create a 16 Gb LPDDR2 DRAM made of four 4 Gb chips but it isn’t available in the market.
 

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Re: Samsung Developed 4GB LPDDR2 DRAM chips using 30nm Techn

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